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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD2107 description collector-emitter breakdown voltage- : v (br)ceo = 60v (min) low collector saturation voltage applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i cm collector current-peak 8 a collector power dissipation @ t c =25 25 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2107 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; r be = 60 v v (br)cbo collector-base breakdown voltage i c = 10 a; i e = 0 70 v v (br)ebo emitter-base breakdown voltage i e = 10 a; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.2a b 1.2 v v be( on ) base-emitter on voltage i c = 1a ; v ce = 4v 1.0 v i cbo collector cutoff current v cb = 60v; i e = 0 10 a i ceo collector cutoff current v ce = 60v; r be = 10 a h fe-1 dc current gain i c = 1a ; v ce = 4v 60 200 h fe-2 dc current gain i c = 0.1a ; v ce = 4v 35 ? h fe- 1 classifications b c 60-120 100-200 isc website www.iscsemi.cn 2 |
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